1 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008

ITRS Public ConferenceEmerging Research Devices

Preparations for 2009 ERD Chapter Re-write

Agenda Emerging Research Technology Workshops (ERD/ERM) Carbon-based Nanoelectronics Highlight Korea ERD

Jim Hutchby – SRCU-In Chung - Samsung

December 9, 2008

2 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008

Hiroyugi Akinaga AIST Tetsuya Asai Hokkaido U. Yuji Awano Fujitsu George Bourianoff Intel Michel Brillouet CEA/LETI Joe Brewer U. Florida John Carruthers PSU Ralph Cavin SRC U-In Chung Samsung Byung Jin Cho KAIST Sung Woong Chung Hynix Shamik Das Mitre Erik DeBenedictis SNL Simon Deleonibus LETI Kristin De Meyer IMEC Michael Frank AMD Christian Gamrat CEA Mike Garner Intel Dan Hammerstrom PSU Wilfried Haensch IBM Tsuyoshi Hasegawa NIMS Shigenori Hayashi Matsushita Dan Herr SRC Toshiro Hiramoto U. Tokyo Matsuo Hidaka ISTEK Jim Hutchby SRC Adrian Ionescu ETH Kohei Itoh Keio U. Kiyoshi Kawabata Renesas Tech Seiichiro Kawamura Selete Rick Kiehl U. Minn Suhwan Kim Seoul Nation U. Hyoungjoon Kim Samsung

Atsuhiro Kinoshita Toshiba Dae-Hong Ko Yonsei U. Hiroshi Kotaki Sharp Atsuhiro Kinoshita Toshiba Atsuhiro Kinoshita Toshiba Franz Kreupl Qimonda Nety Krishna AMAT Zoran Krivokapic AMD Phil Kuekes HP Jong-Ho Lee Kyungpook Nation U. Lou Lome IDA Hiroshi Mizuta U. Southampton Murali Muraldihar Freescale Fumiyuki Nihei NEC Ferdinand Peper NICT Yaw Obeng NIST Dave Roberts Air Products Kaushal Singh AMAT Sadas Shankar Intel Satoshi Sugahara Tokyo Tech Shin-ichi Takagi U. Tokyo Ken Uchida Toshiba Yasuo Wada Toyo U. Rainer Waser RWTH A Franz Widdershoven NXP Jeff Welser NRI/IBM Philip Wong Stanford U. Kojiro Yagami Sony David Yeh SRC/TI In-Seok Yeo Samsung In-K Yoo SAIT Peter Zeitzoff Freescale Yuegang Zhang LLLab Victor Zhirnov SRC

Emerging Research Devices Working Group

3 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008

year

Beyond CMOS

Elements

Existing technologies

New technologies

Evolution of Extended CMOS

More Than Moore

ERD-WG in Japan

4 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008

New ERD/ERM Roadmapping Task

Determine which, if any, current approaches to providing a “Beyond CMOS” information processing technology is/are ready for more detailed roadmapping and enhanced investment.

5 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008

2008 ERD/ERM Workshops Workshop topic Date Location Meeting

Emerging Research Memory Devices

April 2 2008

Bonn, Germany

ITRS Spring meeting

Emerging Research Architectures

July 10-11 2008

Santa Cruz, CA, USA

Semicon West

Evaluation of Beyond CMOS Logic Device Tech

July 12-13 2008

San Francisco, CA, USA

Semicon West

Emerging Research Logic Devices

Sept. 22 2008

Tsukuba, Japan

SSDM

Emerging Research Materials

Nov. 10 2008

Austin, TX, USA

MMM*

Emerging Research Materials

March 2009

Okinawa, Japan

* 53rd Magnetism and Magnetic Materials Conference

Co-sponsored by the National Science Foundation

6 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008

Device Technology Entry Augment/Extend CMOS Beyond CMOS

Nanoelectromechanical Switch X

Spin Transfer Torque X

Collective Strongly Correlated Many-electron Spin Devices X

Carbon-based Nanoelectronics X X

Atomic / Electrochemical Metallization Switches X

Single Electron Transistors X

CMOL / FPNI (Field Programmed Nanowire Interconnect) X

Candidate Technologies for Information Processing

6

7 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008

Emerging Research DeviceTechnology Candidates Evaluated Nano-electro Mechanical Switches Collective Spin Devices Spin Transfer Torque Devices Atomic Switch / Electrochemical Metallization

Switch Carbon-based Nanoelectronics Single Electron Transistors CMOL / Field Programmable Nanowire

Interconnect (FPNI)

8 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008

ERD/ERM TWG Recommendation

The ERD/ERM TWGs recommend to the International Roadmap Committee ---

Carbon-based Nanoelectronics to include carbon nanotubes and

graphene

For additional resources and detailed road mapping for ITRS as promising technologies targeting commercial demonstration in the 5-10 year horizon.

9 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008

SP2 Carbon: 0-Dimension to 3-Dimension

Fullerenes (C60) Carbon Nanotubes

GraphiteGraphene

0D 1D 2D 3D

Atomic orbital sp2

10 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008

Graphene Electronics: Conventional & Non-conventional

Conventional Devices

Cheianov et al. Science (07)

Graphene Veselago lense

FETBand gap engineered Graphene nanoribbons

Nonconventional Devices

Trauzettel et al. Nature Phys. (07)

Graphene psedospintronics

Son et al. Nature (07)

Graphene Spintronics

Graphene quantum dot

(Manchester group)

11 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008

Nanotube FET

Band gap: 0.5 – 1 eVOn-off ratio: ~ 106

Mobility: ~ 100,000 cm2/Vsec @RTBallistic @RT ~ 300-500 nmFermi velocity: 106 m/secMax current density > 109 A/cm2

Vsd (V)0-0.4-0.8-1.2

I sd (A

)

Ph. Avouris et al, Nature Nanotechnology 2, 605 (2007)

Schottky barrier switching

12 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008

AdvantagesCarbon-based Nanoelectronics ---

For scaled CMOS, potentially can .. Impact geometric scaling by providing an alternate

MOSFET structure, and Provide a high mobility, high carrier velocity,

MOSFET channel replacement material.

For a new information process technology, potentially can …

Leverage R & D for CMOS (above) to … Provide a technology platform enabling a new “Beyond

CMOS” information processing paradigm

13 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008

Carbon-based Nanoelectronics

The intent of this recommendation is to highlight Carbon-based Nanoelectronics for additional roadmapping and investment ---

while sustaining exploration of other candidate approaches for “Beyond CMOS” information

processing technology.

14 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008

Summary Prepared for the 2009 ERD Chapter re-write Conducting six workshops in collaboration with

NSF, SRC, and ERM (Five accomplished)– Evaluate technology entries for 2009– Respond to IRC request (see next bullet)

Responded to IRC request to identify one or more Beyond CMOS technologies for roadmapping and enhanced investment– Conducted in-depth evaluation of seven Beyond CMOS

technologies (including one device architecture)– Recommended Carbon-based Nanoelectronics to IRC

15 ERD 2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008

Emerging Research Device Work Groups

International Emerging Research Devices (ERD)

Work Group

US ERD WG

Korea ERDWG

European ERD WG

Japan ERD WG

Dr. U-In Chung

December 9th 2008U-In Chung, Samsung

ITRS ERD/ERM in KOREA

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KSIAKSIA

Korea TWGsKorea TWGs

ERD(ERM) WGERD(ERM) WG

ERD ;U-In Chung (Samsung)

ERMemory Leader : In-Seok Yeo (Samsung)S.W.Chung(Hynix), H.S.Hwang (GIST), T.W.Kim (Sejong univ.), H.C.Sohn (Yonsei univ.), J.I.Hong (Yonsei univ.),C.S.Hwang(Seoul National univ.)

ERDevice Leader : Jong-Ho Lee (Kyungpook univ.)S.G.Kim(Dongbu high tech.), H.C.Shin(Seoul national univ.), Y.G.Choi(KAIST)

ERArchi. Leader : Su-Hwan Kim (Seoul national univ.)K.W.Kwon (SungKyunKwan univ.)

ERM ;Liaison :

U-In Chung

ERMaterial Leader; Dae-Hong Ko (Yonsei univ.)

J.M Myoung(Yonsei univ.), S.H.Hong(Seoul national univ.),

J.H.Lee(Hanyang univ.), B.J.Cho(KAIST)

IRC :Joo-Tae Moon (samsung)Jae-Sung Roh (Hynix)Yoon-Jong Lee (Dongbu)

ERD/ERM Organization & MemberERD/ERM Organization & Member

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Relations in between organizationRelations in between organization

KSIA KSIA

TWG of KoreaTWG of Korea

ERD/ERM WGERD/ERM WG (U-in Jung) (U-in Jung) INC INC (Jin-ho Ahn) (Jin-ho Ahn)

4 Group/ 19 member

Device Maker Researcher(Samsung, Hynix, Dong-bu)

Professor(8 Univ. Seoul nat. univ. etc)

Member

Device Maker Technology Group

(Samsung, Hynix, Dong-bu)

TND (Tera Level Nano Device)Research group

NSI (Nano systems institute, Seoul

Univ.)

COSARCOSAR

R&D Promotion R&D Promotion

[ITRS] [INC]

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ERD(ERM) WGERD(ERM) WG INC WGINC WG

Sharing WG members

1. Maintaining relationship between ITRS, INC and National Projects

by sharing working group members

National Projects LeadersNational Projects Leaders

KSIA / COSARKSIA / COSAR

Key Direction(1)Key Direction(1)

2. Active interaction with ITRS ERD members through ITWG activities

and forums : Working on 2009 ERD/ERM edition.

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3. Regional interests ;

a. Emerging Research memory : Narrowing ~10nm memory candidates

Key Direction(2)Key Direction(2)

Nanomechanical Memory

Fuse-Antifuse Memory

Ionic Memory

Electronic Effects

Memory

Macro-molecula

r Memory

Molecular

Memories

Storage Mechanism

Electrostatically-controlled mechanical

switch

Multiple mech.

Ion transport

andredox

reaction

Multiple mechanism

s

Multiple mech.

Not known

Cell Elements

1T1R or 1D1R1T1R or 1D1R

1T1R or 1D1R

1T1R or 1D1R

1T1R or 1D1R

1T1R or 1D1R

Device Types

1) Nanobridge / cantilever2) telescoping CNT3) Nanoparticle

M-I-M (e.g., Pt/NiO/

Pt)

1) cation migration 2) anion migration

1) Charge trapping2) Mott transition3) FE barrier effects

M-I-M (nc)-I-M

Bi-stable switch

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Key Direction(3)Key Direction(3)

3. Regional interest ;

b. Emerging Research Device :

- GaAs and Ge in ERD

- Focus on Energy effective devices (ex. BTBT devices)

c. Emerging Research Architectures :

- Focus on 3D Architectures

( CMOL, Molecular (oxide) switch bar )

d. Emerging Research Materials :

- Will work with Korean TWIGs such as Interconnect, PKG

- Too much focus on Devise, Focus on Material for memory

- Many forums on memory materials for MLC and 3 D